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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES * High Power Gain: * Low Noise Figure: GPS = 24 dB TYP. (f = 470 MHz) NF = 2.0 dB TYP. (f = 470 MHz) NF = 1.0 dB TYP. (f = 55 MHz) * Automatically Mounting: Embossed Type Taping * Suitable for use as RF amplifier and Mixer in CATV tuner. * Small Package: 4 Pins Mini Mold PACKAGE DIMENSIONS (Unit: mm) 0.4-0.05 0.4-0.05 0.4-0.05 0.16-0.06 +0.1 +0.2 2.8-0.1 +0.2 1.5-0.1 +0.1 2 2.90.2 (1.8) 0.85 0.95 3 4 5 +0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature * RL 10 k VDSX VG1S VG2S ID PD Tch Tstg 18 8 (10)* 8 (10)* 25 200 125 -55 to +125 V V V mA mW C C 0.6-0.05 +0.1 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 5 1.1-0.1 +0.2 0.8 5 0 to 0.1 5 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure 1 Noise Figure 2 SYMBOL BVDSX IDSX VG1S(off) VG2S(off) IG1SS IG2SS | yfs | Ciss Coss Crss GPS NF1 NF2 21.0 22 2.2 1.3 25.5 2.7 1.6 0.015 24.0 2.0 1.0 3.5 2.5 3.2 1.9 0.03 MIN. 18 1.0 0 0 10 +1.0 +1.0 20 20 TYP. MAX. UNIT V mA V V nA nA mS pF pF pF dB dB dB 1. 2. 3. 4. Source Drain Gate2 Gate1 TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 A VDS = 5 V, VG1S = 0.75 V, VG2S = 4 V VDS = 6 V, VG2S = 3 V, ID = 10 A VDS = 6 V, VG1S = 3 V, ID = 10 A VDS = 0, VG2S = 0, VG1S = 10 V VDS = 0, VG1S = 0, VG2S = 10 V VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 470 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 55 MHz IDSX Classification Class Marking IDSX (mA) U87/UHG* U87 1.0 to 6.0 U88/UHH* U88 4.0 to 10.0 * Old Specification/New Specification Document No. P10567EJ2V0DS00 (2nd edition) (Previous No. TD-2263) Date Published August 1995 P Printed in Japan +0.1 (c) (1.9) 1995 1989 3SK176A TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VG1S = 0.8 V VG2S = 4 V PT - Total Power Dissipation - mW 300 ID - Drain Current - mA 400 8 6 0.6 V 4 200 100 2 0.4 V 0.2 V 0 25 50 75 100 125 0 10 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 20 TA - Ambient Temperature - C DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE VDS = 6 V |yfs| - Forward Transfer Admittance - mS 20 40 VDS = 6 V f = 1 kHz 30 3V 20 VG2S = 5 V 4V ID - Drain Current - mA 5V 4V 10 3V 2V VG2S = 1 V 10 2V 1V 0 1.0 VG1S - Gate 1 to Source Voltage - V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5.0 VDS = 6 V f = 1 MHz 4.0 2.0 0 1.0 VG1S - Gate 1 to Source Voltage - V 2.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS 40 3V 20 Ciss - Input Capacitance - pF VDS = 6 V f = 1 kHz 3.0 ID = 10 mA at VG2S = 3 V ID = 5 mA at VG2S = 3 V 2.0 VG2S = 2 V 1.0 0 -1.0 0 10 ID - Drain Current - mA 20 0 1.0 2.0 3.0 4.0 VG2S - Gate 2 to Source Voltage - V 2 3SK176A OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 10 VDS = 6 V f = 1 MHz 20 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE GPS COSS - Output Capacitance - pF 2.0 NF - Noise Figure - dB GPS - Power Gain - dB 10 f = 470 MHz ID = 10 mA (at VDS = 6 V VG2S = 3 V) ID = 10 mA at VG2S = 3 V ID = 5 mA at VG2S = 3 V 1.0 5 0 -10 NF -20 0 -1.0 0 1.0 2.0 3.0 4.0 0 -2.0 0 2.0 4.0 6.0 8.0 VG2S - Gate 2 to Source Voltage - V VG2S - Gate 2 to Source Voltage - V NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC Ferrite Beads 1 500 pF 2.2 k 1 500 pF 1 000 pF INPUT 3.3 k 50 1 000 pF 27 pF 47 k 47 k OUTPUT 27 pF 3.3 k 50 VG1S 3 3SK176A GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 k 1 000 pF Ferrite Beads INPUT 40 pF 50 1 000 pF 22 k L1 15 pF 15 pF L2 40 pF OUTPUT 50 1 000 pF L3 1 000 pF 1 000 pF VG1S VDS L1: 1.2 mm U.E.W 5 mm 1T L2: 1.2 mm U.E.W 5 mm 1T L3: REC 2.2 H 4 3SK176A [MEMO] 5 3SK176A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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